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17.0-25.0 GHz GaAs MMIC Power Amplifier
February 2007 - Rev 05-Feb-07
P1022-BD Chip Device Layout
Features
Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Mimix Broadband's three stage 17.0-25.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 20.0 dB with a +28.0 dBm P1dB output compression point across the band. The device also includes an on-chip temperature compensated output power detector. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd) Supply Current (Id1,2,3) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)
+6.0 VDC 145, 290, 580 mA +0.3 VDC +19.0 dBm -65 to +165 OC -55 to MTTF Graph1 MTTF Graph1
(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Output Power for 1dB Compression (P1dB) 2 Drain Bias Voltage (Vd1,2,3) (Vdet) Gate Bias Voltage (Vg1,2,3) Supply Current (Id1) (Vd=5.0V, Vg=-0.7V Typical) Supply Current (Id2) (Vd=5.0V, Vg=-0.7V Typical) Supply Current (Id3) (Vd=5.0V, Vg=-0.7V Typical) Detector (diff ) Output at 20 dBm3
(2) Measured using constant current. (3) Measured with Vdet=5.0V
Units GHz dB dB dB dB dB dBm VDC VDC mA mA mA VDC
Min. 17.0 -1.0 -
Typ. 9.0 10.0 20.0 +/-2.0 50.0 +28.0 +5.0 -0.7 100 200 400 0.38
Max. 25.0 +5.5 0.0 120 240 480 -
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 9
Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
17.0-25.0 GHz GaAs MMIC Power Amplifier
February 2007 - Rev 05-Feb-07
P1022-BD
Power Amplifier Measurements
XP1022 Vd=5.0 V Id1=100 mA, Id2=200 mA, Id3=400mA
25 24 23
-20 0 -10
XP1022 Vd=5.0 V Id1=100 mA, Id2=200 mA, Id3=400mA
22
Gain (dB)
Reverse Isolation (dB)
21 20 19 18 17 16 15 15.0
-30 -40 -50 -60 -70 -80 15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
27.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
27.0
Frequency (GHz)
Frequency (GHz)
XP1022 Vd=5.0 V Id1=100 mA, Id2=200 mA, Id3=400mA
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 15.0
XP1022 Vd=5.0 V Id1=100 mA, Id2=200 mA, Id3=400mA
5 0
Output Return Loss (dB)
16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0
Input Return Loss (dB)
-5 -10 -15 -20 -25 -30 -35 15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
27.0
Frequency (GHz)
Frequency (GHz)
XP1022 Vd1,2,3=Various, Id1=100 mA, Id2=200 mA, Id3=400 mA
30 29
Output Power P1dB (dBm)
28 27 26 25 24 23 22 21 20 17.5 18 18.5 19 19.5 20 20.5 21 21.5 22 22.5 23 23.5 24
Frequency (GHz) P1dB @ 5 V P1dB @ 6 V
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 9
Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
17.0-25.0 GHz GaAs MMIC Power Amplifier
February 2007 - Rev 05-Feb-07
P1022-BD
Power Amplifier Measurements (cont.)
XP1022 Vd1,2,3=5.0 V, Id1=100 mA, Id2=200 mA, Id3=400 mA
32 31 30
, Pin_R=0 , Pin_R=1 , Pin_R=2 , Pin_R=3 , Pin_R=4 , Pin_R=5 , Pin_R=6 , Pin_R=7 , Pin_R=8 , Pin_R=9 , Pin_R=10 , Pin_R=11 , Pin_R=12 , Pin_R=13 , Pin_R=14 , Pin_R=15
Output Power (dBm)
29 28 27 26 25 24 23 22 17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
, Pin_R=16
Frequency (GHz)
XP1022 Vd1,2,3=6.0 V, Id1=112mA, Id2=225mA, Id3=450mA
32 31 30
, Pin_R=0 , Pin_R=1 , Pin_R=2 , Pin_R=3 , Pin_R=4 , Pin_R=5 , Pin_R=6 , Pin_R=7 , Pin_R=8 , Pin_R=9 , Pin_R=10 , Pin_R=11 , Pin_R=12 , Pin_R=13 , Pin_R=14 , Pin_R=15
Output Power (dBm)
29 28 27 26 25 24 23 22 17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
, Pin_R=16
Frequency (GHz)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 9
Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
17.0-25.0 GHz GaAs MMIC Power Amplifier
February 2007 - Rev 05-Feb-07
P1022-BD
S-Parameters
Typcial S-Parameter Data for XP1022 Vd=5.0 V Id=700 mA Frequency (GHz) 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0 S11 (Mag) 0.277 0.421 0.463 0.440 0.375 0.292 0.237 0.248 0.307 0.342 0.347 0.369 0.379 0.331 0.243 0.176 0.311 0.434 0.553 0.673 0.770 S11 (Ang) 139.82 134.95 118.37 98.31 72.94 39.12 -8.00 -57.80 -96.42 -122.98 -140.05 -152.63 -171.01 168.03 129.95 38.36 -43.15 -72.33 -87.92 -101.09 -112.45 S21 (Mag) 0.323 0.839 1.354 2.094 3.412 5.548 8.157 10.017 11.155 11.152 10.639 10.553 11.113 12.438 14.706 15.501 10.854 5.509 2.450 1.007 0.393 S21 (Ang) 21.12 -51.78 -116.14 -166.99 143.21 88.50 27.93 -34.68 -94.50 -152.01 155.81 107.90 59.09 8.22 -50.74 -126.00 148.69 73.31 10.18 -43.72 -88.51 S12 (Mag) 0.0002 0.0004 0.0006 0.0008 0.0006 0.0006 0.0007 0.0007 0.0021 0.0023 0.0024 0.0009 0.0011 0.0013 0.0012 0.0009 0.0010 0.0008 0.0003 0.0008 0.0006 S12 (Ang) -136.99 -145.34 -162.67 -178.30 151.23 155.53 167.67 -175.12 152.55 115.10 70.14 45.90 81.27 55.37 39.93 44.25 42.02 10.27 23.03 21.06 -57.54 S22 (Mag) 0.932 0.925 0.921 0.908 0.879 0.824 0.739 0.636 0.518 0.344 0.178 0.052 0.057 0.111 0.112 0.106 0.218 0.430 0.622 0.753 0.821 S22 (Ang) -36.73 -41.28 -46.90 -53.90 -62.28 -72.17 -83.02 -94.44 -109.78 -126.56 -137.44 -138.07 -18.94 -31.38 -57.80 -115.41 166.00 118.83 86.49 61.94 42.45
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 9
Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
17.0-25.0 GHz GaAs MMIC Power Amplifier
February 2007 - Rev 05-Feb-07
P1022-BD
0.514 (0.020) 0.890 (0.035) 1.519 (0.060)
Mechanical Drawing
1.330 (0.052)
2
3
4
0.745 (0.029)
1
5
0.716 (0.028)
0.0 0.0
11 0.467 (0.018)
10 0.831 (0.033)
9 1.623 (0.064)
6 87
2.036 (0.080) 2.145 (Note: Engineering designator is 20MPA0773) (0.084)
0.194 (0.008) 0.085 (0.003) 2.230 (0.088)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All DC Bond Pads (except Vd3) are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads (and Vd3) are 0.100 x 0.200 (0.004 x 0.008) Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.839 mg. Bond Pad #1 (RF In) Bond Pad #2 (Vd1) Bond Pad #3 (Vd2) Bond Pad #4 (Vd3) Bond Pad #5 (RF Out) Bond Pad #6 (Ref ) Bond Pad #7 (Vdet) Bond Pad #8 (Det) Bond Pad #9 (Vg3) Bond Pad #10 (Vg2) Bond Pad #11 (Vg1)
Bias Arrangement
Vd1
Vd2
Vd3
Bypass Capacitors - See App Note [2]
2
3
4
RF In
1
5
RF Out
11
10
9
6 87
Ref Vdet Det
Vg1 Vg2 Vg3
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 9
Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
17.0-25.0 GHz GaAs MMIC Power Amplifier
February 2007 - Rev 05-Feb-07
P1022-BD
App Note [1] Biasing - It is recommended to separately bias each amplifier stage Vd1 through Vd3 at Vd(1,2,3)=5.0V with Id1=100mA, Id2=200mA and Id3=400mA. Separate biasing is recommended if the amplifier is to be used at high levels of saturation, where gate rectification will alter the effective gate control voltage. For non-critical applications it is possible to parallel all stages and adjust the common gate voltage for a total drain current Id(total)=700 mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.7V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. For Individual Stage Bias (Recommended for saturated applications) - Each DC pad (Vd1,2,3 and Vg1,2,3) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. App Note [3] On Board Detector - The output signal of the power amplifier is coupled via a 15 dB directional coupler to a detector, which comprises a diode connected to the signal path, and a second diode used to provide a temperature compensation signal. The common bias terminal is Vdet, and is nominally set to forward bias both diodes. The Vdet port can be connected directly to a 5V bias, and given the internal series resistance, results in about 1mA of bias current. App Note [4] Output Power Adjust Using Drain/Gate Control - This device has a very useful additional feature. The output power can be adjusted by lowering the combined drain voltages and individual or combined gate voltages towards pinch off without sacrificing much in the way of Input/Output 3rd Order Intercept Point. Improvements to the IIP3/OIP3 while attenuating the gain are also possible with individual gate control. Data here has been taken using combined drain and gate control (all gates changed together) to lower the device's output power. The results are shown below. Additionally, the accompanying graph shows the typical level of attenuation achievable as the drain and gate is adjusted at various levels until pinch-off.
30
1200 1100 1000 900
, Input Freq (GHz)=17.5 , Input Freq (GHz)=18 , Input Freq (GHz)=18.5 , Input Freq (GHz)=19 , Input Freq (GHz)=19.5 , Input Freq (GHz)=17.5 , Input Freq (GHz)=18 , Input Freq (GHz)=18.5 , Input Freq (GHz)=19 , Input Freq (GHz)=19.5 , Input Freq (GHz)=17.5 , Input Freq (GHz)=18 , Input Freq (GHz)=18.5 , Input Freq (GHz)=19 , Input Freq (GHz)=19.5
25 20
Video (mV)
800 700 600 500 400 300 200 100 0 -20 -15 -10 -5 0 5 10 15 20 25 30 Power out (dBm)
Output Power (dBm)
15 10 5 0 -5 -10 -15 -20 -25 0 100 200 300 400 500 D/A Value 600 700 800 900 1000
, Input Freq (GHz)=17.5 , Input Freq (GHz)=18 , Input Freq (GHz)=18.5 , Input Freq (GHz)=19 , Input Freq (GHz)=19.5
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 6 of 9
Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
17.0-25.0 GHz GaAs MMIC Power Amplifier
February 2007 - Rev 05-Feb-07
P1022-BD
MTTF Graphs
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
XP1022-BD Vd=5.0 V, Id=700 mA
1.0E+09
1.00E+05
XP1022-BD Vd=5.0 V, Id=700 mA
1.0E+08
MTTF (hours)
1.00E+04
1.0E+07
FITS
1.00E+03
1.0E+06
1.00E+02
1.0E+05
1.00E+01
1.0E+04 55 65 75 85 95 105 115 125
Backplate Temperature (deg C) No RF Pout=+27 dBm
1.00E+00 55 65 75 85 95 105 115 125 Baseplate Temperature (deg C) No RF Pout=+27 dBm
XP1022-BD Vd=5.0 V, Id=700 mA
40 38 36
Rth (deg C/W)
220 260
XP1022-BD Vd=5.0 V, Id=700 mA
240
34 32 30 28 26 55 65 75 85 95 105 115 125 Baseplate Temperature (deg C) No RF Pout=+27 dBm
Tch (deg C)
200
180
160
140 55 65 75 85 95 105 115 125 Backplate Temperature (deg C) No RF Pout=+27 dBm
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 7 of 9
Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
17.0-25.0 GHz GaAs MMIC Power Amplifier
February 2007 - Rev 05-Feb-07
P1022-BD
Device Schematic
VD1 VD2 VD3
stage 1 RFin
stage 2
stage 3 RFout
VG1
VG2
VG3
Typical Application
XU1002
XB1004 or XB1009 Sideband Reject
XP1022
IF IN 2.0 GHz
RF Out 17.7-19.7 GHz
LO(+2.0dBm) 7.85-8.85 GHz (USB Operation) 9.85-10.85 GHz (LSB Operation)
Mimix Broadband MMIC-based 18.0-25.0 GHz Transmitter Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 25.0 GHz)
Mimix Broadband's 18.0-25.0 GHz XU1002 GaAs MMIC Transmitter can be used in saturated radio applications and linear modulation schemes up to 16 QAM. The transmitter can be used in upper and lower sideband applications from 18.0-25.0 GHz.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 8 of 9
Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
17.0-25.0 GHz GaAs MMIC Power Amplifier
February 2007 - Rev 05-Feb-07
P1022-BD
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C +/- 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Part Number for Ordering XP1022-BD-000V XP1022-BD-EV1 Description RoHS compliant die packed in vacuum release gel packs XP1022-BD evaluation module
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 9 of 9
Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.

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